PIN射频开关的基本情况概述④–射频易商城

小编 1年前 (2022-12-09) 0 999+

PIN射频开关的基本情况概述④

1.4.4 S 波段梳状线滤波器型 PIN 开关

这是由梳状滤波器和PIN管结合而形成的SPST开关，由于此种开关中的PIN管的结电容被
纳入滤波器的谐振元中， PIN管的寄生参数获得了合理的利用，从而大大提高了开关的性能。
因此它具有较宽的带宽、损耗小、隔离度高、结构紧凑、体积小、重量轻的特点。
如果用PIN管的C代替图l中的集中电容C5就可能形成微波PIN开关。当PIN管施加反向偏
压时， PIN开关处于通过状态，这时输入的微波信号以确定的损耗通过PIN开关，此时有：
C i +C
p =C
s
n 。其中C i 为PIN管的结电容， C p 为管壳电容。当PIN管施加正向偏压时，根据其
转换特性，这时梳状滤波器的各个谐振器完全变成一个个失谐结构。它们对输入的微波信号
具有完全截止的特性。

1. 5 管芯类型参数及掺杂

1. 5. 1 MA-COM公司的产品

M/A-COM Technology Solutions offers a comprehensive line of low capacitance, planar and mesa,
silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The
Silicon PIN Chip series of devices cover a broad spectrum of performance requirements for control
circuit applications. They are available in several choices of I-region lengths and have been
optimally designed to minimize parametric trade offs when considering low capacitance, low series
resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal
choice for broadband, high frequency, micro-strip hybrid assemblies.

Notes:

1. Nominal carrier life time,T L , specified at I F = + 10mA , I REV = - 6mA.

2. Nominal reverse recovery time specified at I F = + 20mA , I REV = - 200mA.

3. V R ( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured

to be <10μA.